Verifying SRAM Yield Inclusive Of Rare And Random Defects


Large disparities were observed between wafer level SRAM Access Disturb related bit-fails as measured on silicon wafers and the number of such bit-fails as predicted by intrinsic device variability alone. Root cause investigations pointed to a rare but random defect lowering threshold voltage of the NFET devices of the SRAM bit-cell. This work presents a novel method to enable the inclusion of ... » read more