Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations


A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more