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Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more