Power/Performance Bits: Feb. 26


Integrated RRAM for edge AI Researchers at CEA-Leti and Stanford University have developed the first circuit integrating multiple-bit non-volatile Resistive RAM (RRAM) with silicon computing units, as well as new memory resiliency features that provide 2.3-times the capacity of existing RRAM. The proof-of-concept chip monolithically integrates two heterogeneous technologies: 18KB of on-chip... » read more

Manufacturing Bits: Jan. 2


Better nanowire MOSFETs At the recent IEEE International Electron Devices Meeting (IEDM), Imec and Applied Materials presented a paper on a new and improved way to fabricate vertically stacked gate-all-around MOSFETs. More specifically, Imec and Applied reported on process improvements for a silicon nanowire MOSFET, which is integrated in a CMOS dual work function metal replacement metal ga... » read more

Manufacturing Bits: Nov. 27


New kilogram definition After years of debate and scientific work, a group of delegates from 60 countries have voted to redefine four key unit measurements—the kilogram, electric current (ampere), temperature (kelvin), and the amount of substance (mole). The vote took place at the recent 26th General Conference of Weights and Measures. Hosted by the International Bureau of Weights and Mea... » read more

Practical Methods To Overcome The Challenges Of 3D Logic Design


What should you do If you don’t have enough room on your floor to store all your old boxes? Luckily, we live in a 3D world, and you can start stacking them on top of each other. The Challenge: How can we shrink logic devices? Logic designers are currently facing even bigger challenges than you might be having in tidying up your storage area. Not only are logic cells highly packed together... » read more

SOS Collaboration Platform: Powering The Next Discoveries In Physics


The world is on the cusp of some of the greatest scientific breakthroughs in human history. The experiments physicists are carrying out today will shed new light on how our universe works. The Large Hadron Collider (LHC), a $10 billion project, unleashed a new perspective of how our universe works by letting us take a look at how tiny particles interact. You can forgive the physicists workin... » read more

The Week In Review: Manufacturing


Manufacturing There are more changes at SEMI. SEMI has named David Anderson as president of the SEMI Americas region. Most recently, Anderson was chief executive and chairman of Novati, a specialty manufacturing fab. He replaces Karen Savala, who was president of the SEMI Americas region for six years. In an e-mail, Savala confirmed she left SEMI in October. Meanwhile, in October, SEMI an... » read more

System Bits: Nov. 29


Qubit device fabbed in standard CMOS In a major step toward commercialization of quantum computing, Leti, an institute of CEA Tech, along with Inac, a fundamental research division of CEA, and the University of Grenoble Alpes have achieved the first demonstration of a quantum-dot-based spin qubit using a device fabricated on a 300-mm CMOS fab line. Maud Vinet, Leti’s advanced CMOS manager... » read more

GlobalFoundries Rolls Out 12nm FD-SOI Process


GlobalFoundries uncorked its 12FDX platform, incorporating a 12nm fully-depleted silicon-on-insulator process technology. The foundry’s Fab 1 in Dresden, Germany, will support customer development with the 12nm process, with product tape-outs scheduled for the first six months of 2019. The 12FDX technology follows the company’s 22FDX platform involving a 22-nanometer process. The foundr... » read more

Stacking Logic On Logic


Advanced packaging can be an alphabet soup of possible approaches, from heterogenous integration of multiple die types into a single package, to three-dimensional stacking of multiple dies on top of each other. Three-dimensional chip stacking is most commonly seen in memory devices. Applied to logic, though, there are at least two different ways for integration to proceed. Completely process... » read more

FD-SOI Strains For The Future


One of the challenges facing supporters of FD-SOI is the need to provide a pathway to improved performance. While FD-SOI wafers offer some significant advantages over bulk silicon wafers, performance enhancements like strain and alternative channel materials are more difficult to implement in the thin SOI environment. On the other hand, once a fab is willing to incorporate layer transfer techni... » read more

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