What To Do About Electrostatic Discharge

By Ed Sperling - 20 Nov, 2023 - Comments: 0

Electrostatic discharge is a well-understood phenomenon, but it’s becoming more difficult to plan for as single chips are replaced by multiple chips or chiplets in a package, and as the density of components continues to increase with each new node. In both cases, the probability for failure increases unless these sudden shocks are addressed in the design. Dermott Lynch, director of product m... » read more

ESD Co-Design For 224G And 112G SerDes In FinFET Technologies

By Synopsys - 25 Oct, 2023 - Comments: 0

In addressing the challenges of enhancing ESD resilience for high-speed SerDes interfaces, it's crucial to ensure the implementation of appropriate ESD protection measures. This is particularly vital during the device's lifecycle from the conclusion of silicon wafer processing to system assembly, a phase during which electronic devices are highly susceptible to Electrostatic Discharge (ESD) dam... » read more

ESD Co-Design For High-Speed SerDeS In FinFET Technologies

By Synopsys - 07 Jun, 2023 - Comments: 0

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, including the phase from the completion of the silicon wafer processing to when the device (die) is assembled in the system. To avoid yield loss due to ESD damage during this early phase, on-chip ESD protection measures are applied to provide a certain degree of ESD robustness. The componen... » read more

Assessing ESD Sensitivity Of Interface IP Using Charged Device Model

By Synopsys - 07 Dec, 2016 - Comments: 0

An electronic device is susceptible to Electrostatic Discharge (ESD) damage during its entire life cycle, especially from the completion of the silicon wafer processing to when the device is assembled in the system. The most commonly used ESD test models are the Human Body Model (HBM) and the Charged Device Model (CDM). Both models assess the ESD sensitivity of a device, however due to the rapi... » read more

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tag: charged device model

What To Do About Electrostatic Discharge

ESD Co-Design For 224G And 112G SerDes In FinFET Technologies

ESD Co-Design For High-Speed SerDeS In FinFET Technologies

Assessing ESD Sensitivity Of Interface IP Using Charged Device Model

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