Research Bits: December 11


Diamond device with high breakdown voltage Researchers from the University of Illinois at Urbana-Champaign developed diamond p-type lateral Schottky barrier diodes they say have the highest breakdown voltage and lowest leakage current compared to previous diamond devices. The diamond device can sustain high voltage, approximately 5 kV, although the voltage was limited by setup of measurement a... » read more

Research Bits: August 22


Photonic memory Researchers from Zhejiang University, Westlake University, and the Chinese Academy of Sciences developed a 5-bit photonic memory capable of fast volatile modulation and proposed a solution for a nonvolatile photonic network supporting rapid training. This was made possible by integrating the low-loss phase-change material (PCM) antimonite (Sb2S3) into a silicon photonic plat... » read more

Power/Performance Bits: Sept. 3


Nylon capacitor Researchers at the Max Planck Institute for Polymer Research, Johannes Gutenberg University of Mainz, and Lodz University of Technology developed a way to fabricate ferroelectric nylon thin-film capacitors. Nylons consist of a long chain of polymers and, along with use in textiles, exhibit ferroelectric properties. However, electronic applications have been limited as there ... » read more