CFETs: Reliability of Complementary Field-Effect Transistors (TU Munich, IIT)


A technical paper titled "CFET Beyond 3 nm: SRAM Reliability under Design-Time and Run-Time Variability" was published by researchers at TU Munich and IIT Kanpur. Abstract "This work investigates the reliability of complementary field-effect transistors (CFETs) by addressing both design-time variability arising from process variations and run-time variability due to temperature and aging ef... » read more

A Study Of Next-Generation CFET Process Integration Options


Decision making is a critical step in semiconductor technology development. R&D semiconductor engineers must consider different design and process options early in the development of a next-generation technology. Established techniques such as Failure Mode and Effect Analysis (FMEA) can be used to select among the most promising design and process choices. Once specific design and process m... » read more