Convolutional Compaction-Based MRAM Fault Diagnosis

Abstract: "Spin-transfer torque magnetoresistive random-access memories (STT-MRAMs) are gradually superseding conventional SRAMs as last-level cache in System-on-Chip designs. Their manufacturing process includes trimming a reference resistance in STT-MRAM modules to reliably determine the logic values of 0 and 1 during read operations. Typically, an on-chip trimming routine consists of mult... » read more