A technical paper titled “Ultra-steep slope cryogenic FETs based on bilayer graphene” was published by researchers at RWTH Aachen University, Forschungszentrum Julich, National Institute for Materials Science (Japan), and AMO GmbH.
"Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slop...
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