Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes

A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more