Power/Performance Bits: May 26


Woven fabric electrodes An international team including scientists from the University of Exeter pioneered a new technique to embed transparent, flexible graphene electrodes into fibers commonly associated with the textile industry. Exeter Professor Monica Craciun, co-author of the research said: "This is a pivotal point in the future of wearable electronic devices. The potential has been... » read more

Power/Performance Bits: March 3


Black phosphorus photodetectors Phosphorus, a highly reactive element commonly found in match heads, tracer bullets, and fertilizers, can be turned into a stable crystalline form known as black phosphorus. In a new study, researchers from the University of Minnesota used an ultrathin black phosphorus film 20 atoms thick to demonstrate high-speed data communication on nanoscale optical circui... » read more

Avogy: Vertical GaN Power Devices


Gallium nitride (GaN), a binary III-V bandgap material, has been used to make LEDs for the last several years. GaN has also been touted as the next big thing in power electronics and RF. To some degree, GaN has made inroads in RF, especially in high-end defense and aerospace applications. But the technology is having mixed success in power electronics. Today’s GaN-on-silicon devices are l... » read more

Manufacturing Bits: Jan. 14


MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more

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