High-Temp, High-Electron Mobility MOSFETs Based On N-Type Diamond


A new technical paper titled "High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond" was published by researchers at National Institute for Materials Science (Japan). Abstract: "Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of c... » read more

Diamond Semiconductor: Highest Breakdown Voltage, Lowest Leakage Current


A technical paper titled "Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)" was published by researchers at University of Illinois at Urbana–Champaign. Abstract "Diamond p-type lateral Schottky barrier diodes (SBDs) with a 2- μm -thick drift layer are fabricated with and without Al2O3 field plates. Schottky contacts composed of Mo (50 nm) ... » read more

Power Semiconductors: A Deep Dive Into Materials, Manufacturing & Business


Whether you’re the owner of the average smartphone, commuting on trains, or driving around in a Tesla, you use power semiconductor devices every day. In a technology-dependent world, these devices are everywhere, and demand for more types of chips using different materials is growing. In the past, most engineers paid little attention to power semiconductors. They were deemed commodity, off... » read more