A new technical paper titled “High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond” was published by researchers at National Institute for Materials Science (Japan).
Abstract:
“Diamond holds the highest figure-of-merits among all the known semiconductors for next-generation electronic devices far beyond the performance of conventional semiconductor silicon. To realize diamond integrated circuits, both n- and p-channel conductivity are required for the development of diamond complementary metal-oxide-semiconductor (CMOS) devices, as those established for semiconductor silicon. However, diamond CMOS has never been achieved due to the challenge in n-type channel MOS field-effect transistors (MOSFETs). Here, electronic-grade phosphorus-doped n-type diamond epilayer with an atomically flat surface based on step-flow nucleation mode is fabricated. Consequently, n-channel diamond MOSFETs are demonstrated. The n-type diamond MOSFETs exhibit a high field-effect mobility around 150 cm2 V−1 s−1 at 573 K, which is the highest among all the n-channel MOSFETs based on wide-bandgap semiconductors. This work enables the development of energy-efficient and high-reliability CMOS integrated circuits for high-power electronics, integrated spintronics, and extreme sensors under harsh environments.”
Find the technical paper here. Published Jan. 2024.
M. Liao, H. Sun, S. Koizumi, High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond. Adv. Sci. 2024, 11, 2306013. https://doi.org/10.1002/advs.202306013
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