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A Star Is Born: Gallium Nitride And The Coming Age Of Compound Semiconductors


Not so long ago, Blu-ray was hailed as a technological advancement in the world of digital video. But in the streaming era, Blu-ray’s luster has faded. However, the technology responsible for the blue laser diode that gave the Blu-ray player its name – gallium nitride (GaN) – is emerging as one of a number of exciting new developments in the semiconductor industry. Today, GaN is used b... » read more

On The Reverse Breakdown Behavior Of GaAs PIN Diodes For High Power Applications


In the field of power electronics, the compound semiconductors gallium nitride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices based on gallium arsenide for use in power electronics with comparable or better properties, but at lower costs. In this work, a first GaAs PIN diode... » read more

MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application


A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more

Overview of Silicon, Silicon Carbide and Gallium Nitride for Power Electronics


New open access research paper "Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga-N" from various institutions in India mostly. Abstract "There is no reservation that semiconductor equipment distorted the world despite the fact of doing the practical experiments and also in research field. Researchers will communicate the process of semiconducto... » read more

Gallium Oxide Power Electronic Roadmap


New research paper addressing challenges in using gallium oxide. ABSTRACT "Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the potential for a new semiconductor system requires a concerted effort by the community to address technical barriers which limit performance. Du... » read more

GaN ICs Wanted for Power, EV Markets


Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

PCB Layout Tips For Low Side Gate Drivers With OCP


Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally controlled Power Factor Correction (PFC) applications with boost topology and ground reference switching. In PFC applications, shunts are used to sense power switch current or DC bus current... » read more

Higher Creepage And Clearance Make For More Reliable Systems


Electrical and electronic applications must be designed to ensure human safety, as well as systems reliability from high-voltage conditions. Thus, the power semiconductors used must also fulfill these safety and distance standards set by organizations such as Underwriter Laboratories (UL) or the International Electrotechnical Commission (IEC). Even though the TO247 package has been widely us... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications


Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

A Comparative Analysis of Computer-Aided Design Tools for Complex Power Electronics Systems


Abstract: "Companies working on semiconductors must currently assure the customers of not only the performance of the semiconductor device per se, but also its performance when it is implemented in a real board, therefore including the role of parasitic effects. It is therefore very important to evaluate, especially during the design phase, not only the single device, but the complete board ... » read more

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