What’s Next For Power Electronics? Beyond Silicon


For more than half a century, silicon has been the bedrock of power electronics. Yet as silicon meets its physical limitations in higher-power, higher-temperature applications, the industry’s relentless pursuit of more efficient power systems has ushered in the wide bandgap (WBG) semiconductors era. The global WBG semiconductors market reached $1.6 billion in 2022, with an estimated CAGR of ... » read more

Using OCD To Measure Trench Structures In SiC Power Devices


You don’t have to be a dedicated follower of the transportation industry to know it is in the early stages of a significant transition, away from the rumbling internal combustion engine to the quiet days of electric vehicles. The signs of this transition are right there on the streets in the form of electric-powered buses, bikes and cars. The road to our electric future is before us, but we w... » read more

Why Is The Power Device Market So Hot Right Now?


Growing adoption of electric vehicles (EVs) and renewable energy sources is putting the spotlight on power semiconductor devices. These power devices have always been essential in determining the efficiency of a variety of systems, from small household electronics to equipment used in outer space. But as calls to reduce carbon emissions get louder, the market for these chips continues to flouri... » read more

Using TCAD To Simulate Wide-Bandgap Materials For Electronics Design


Wide-bandgap (WBG) semiconductors are a class of materials that can offer a range of advantages over silicon. These materials can operate at higher voltages and higher temperatures, serving as critical enablers of innovation in Power and RF applications and functioning in a wider range of environments that are sometimes extreme. Electronics applications benefit from these wide-bandgap materials... » read more

Properties Of The State-Of-The-Art Commercially Available SiC and GaN Power Transistors


A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. Abstract: "We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Materi... » read more

Using FTIR To Improve SiC Power Device Performance


The figures alone are impressive: SiC power devices are experiencing an annual average growth rate approaching 34% through 2027, according to the Yole Group. However, the potential for this amongst other compound semiconductor-based power devices such as gallium nitride (GaN) to change the world around us is even more impressive. Thanks to the role that SiC-based devices play in the increase... » read more

Lateral 3 kV AlN SBDs on Bulk AlN Substrates By MOCVD


A new technical paper titled "3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD" was published by researchers at Arizona State University. Abstract "This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying char... » read more

What To Do About Electrostatic Discharge


Electrostatic discharge is a well-understood phenomenon, but it’s becoming more difficult to plan for as single chips are replaced by multiple chips or chiplets in a package, and as the density of components continues to increase with each new node. In both cases, the probability for failure increases unless these sudden shocks are addressed in the design. Dermott Lynch, director of product m... » read more

Big Shifts In Power Electronics Packaging


The power semiconductor market is poised for remarkable growth in the next several years, fueled by the adoption of electric vehicles and renewable energy, but it also driving big changes in the packaging needed to protect and connect these devices. Packaging is playing an increasingly critical role in the transition to higher power densities, enabling more efficient power supplies, power deli... » read more

Addressing Trench Structures And Larger Wafers For Power Devices


Wind power. Rail. Solar energy. And, perhaps most significantly, electric and hybrid vehicles. Together, these four forces are among the major demand drivers for power devices. While silicon (Si) still plays a role in power devices, wide-bandgap compound semiconductors like silicon carbide (SiC) and gallium nitride (GaN) are particularly well-suited for power devices thanks to their higher e... » read more

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