GAA NSFETs: ML for Device and Circuit Modeling

A new technical paper titled "A Comprehensive Technique Based on Machine Learning for Device and Circuit Modeling of Gate-All-Around Nanosheet Transistors" was published by researchers at National Yang Ming Chiao Tung University. Abstract (excerpt) "Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domai... » read more

Optimizing Metal Film Measurement On IGBT And MOSFET Power Devices With Picosecond Ultrasonic Technology

By Johnny Dai with Cheolkyu Kim and Priya Mukundhan In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power semiconductor devices will be insulated gate bipolar transistor (IGBT) and power metal oxide semiconductor field effect transistor (power MOSFET) ... » read more

Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance (ROHM)

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Abstract: "The intrinsic gate resistance ( Rg_in) , which is a novel resistance factor embedded in transistors, was determined for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFE... » read more

Search Based Method For Identifying Aging Model Parameters

A technical paper titled “Leveraging Public Information to Fit a Compact Hot Carrier Injection Model to a Target Technology” was published by researchers at University of Victoria. Abstract: "The design of countermeasures against integrated circuit counterfeit recycling requires the ability to simulate aging in CMOS devices. Electronic design automation tools commonly provide this ability... » read more

Testing Devices In Module Packages And Designing Cryogenic Current Sensors For All-Electric Aircraft

A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. Abstract: "Cryogenic propulsion with hydrogen fuel cells replacing fossil fuels is a promising solution to cut carbon emissions in the aviation sector. Hydrogen will also be used for cooling the superconducting mac... » read more

SB MOSFET-Based Ultra-Low Power Real-Time Neurons for Neuromorphic Computing (Indian Institute of Technology)

A technical paper titled “Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing” was published by researchers at the Indian Institute of Technology (IIT) Bombay. Abstract: "Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFE... » read more

Production Testing Of Discrete Power Products

By Vineet Pancholi and Dennis Dinawanao Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged modules are some of the more popular discrete products. Switches control the flow of current within a circuit. MOSFETs are a building block of most electronic... » read more

Functional-Engineered MXene Transistors

A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Modeling Effects Of Fluctuation Sources On Electrical Characteristics Of GAA Si NS MOSFETs Using ANN-Based ML

Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled "A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si Nanosheet MOSFETs." "This study has comprehensively analyzed the potential of the ANN-based ML strategy in modeling the effect of fluctuation sources on electrical characteristics of GAA Si NS MOSF... » read more

Designing and Simulating Low-Voltage CMOS Circuits Using Four-Parameter Model

New technical paper titled "Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits" from researchers at Federal University of Santa Catarina, Brazil. Abstract "This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced com... » read more

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