Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

What’s Next For NAND?


NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going forward, vendors face new challenges on several fronts. On one front, for example, the overall NAND market is currently in the doldrums, amid soft product prices and a mild capacity glut. Demand ... » read more

One PHY Does Not Fit All


Consumers expect their battery-operated mobile devices to be faster, smaller and more reliable while providing greater functionality at a reduced cost. Most of all, consumers demand longer battery life and 24/7 access to data. To meet these demands, consumer system-on-a-chip (SoC) designers must make tradeoffs between features, performance, power and cost. Enterprise SoC designers have their... » read more