中文 English

A Revolution For Power Conversion Systems — CoolSiC MOSFET


Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

Understand MOSFET Switch Behavior Via An LED Driver Simulation


Automotive incandescent bulbs have largely given way to more efficient, reliable, stylish, and even safer light emitting diodes (LEDs). LEDs turn on in a fraction of the time and are especially useful in brake lamps, where fractions of a second matter. The challenge in designing an automotive LED lamp is in satisfying government requirements for light output while also being cost effective. Ano... » read more

Manufacturing Bits: Jan. 21


New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation


Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

Silicon Carbide’s Superpowers


As we enter a new computing era driven by the Internet of Things (IoT), Big Data and Artificial Intelligence (AI), demand is growing for more energy-efficient chips. In this context, we usually think about Moore’s Law and reducing the size of transistors. However, advances in power semiconductors are not governed by node size reduction. Silicon power switches, such as MOSFETs and IGBTs, ar... » read more

Inspection, Metrology Challenges Grow For SiC


Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more

Interest Grows In Ferroelectric Devices


Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

What’s Next For NAND?


NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going forward, vendors face new challenges on several fronts. On one front, for example, the overall NAND market is currently in the doldrums, amid soft product prices and a mild capacity glut. Demand ... » read more

← Older posts