Quantum Computers And CMOS Semiconductors: A Review And Future Predictions


With the advent of quantum computing, the need for peripheral fault-tolerant logic control circuitry has reached new heights. In classical computation, the unit of information is a “1” or “0”. In quantum computers, the unit of information is a qubit which can be characterized as a “0”, “1”, or a superposition of both values (known as a “superimposed state”). The control c... » read more

GaN ICs Wanted for Power, EV Markets


Circuits built with discrete GaN components may get the job done, but fully integrated GaN circuits remain the ultimate goal because they would offer many of the same advantages as integrated silicon circuits. These benefits include lower cost as the circuit footprint is scaled, and reduced parasitic resistance and capacitance with shorter interconnect runs. In addition, improved device perf... » read more

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications


Abstract: "Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabi... » read more

Safe And Reliable MOSFET Operation In Bidirectional Power Switch (BDPS) Applications


The global market for battery-powered applications is rapidly growing, including power tools, service robots, light electric vehicles, and many others. The evolution of switched-mode power supply (SMPS) topologies enables designers to ensure safe charging and discharging of the equipment’s battery using bidirectional converters through the same terminal. However, to meet the safety requiremen... » read more

A Revolution For Power Conversion Systems — CoolSiC MOSFET


Silicon carbide (SiC) transistors are increasingly used in power converters, placing high demands on the size, weight and/or efficiency. The outstanding material properties of SiC enable the design of fastswitching unipolar devices as opposed to bipolar IGBT devices. Thus, solutions which have been up to now possible in the low-voltage world only (< 600 V) are now possible at higher voltages... » read more

Manufacturing Bits: June 7


High-voltage superjunction SiC devices The University of Warwick and Cambridge Microelectronics have presented a paper on the latest effort to develop of a new type silicon carbide (SiC) power device called a SiC superjunction Schottky diode. Researchers have simulated and optimized the development of 4H-SiC superjunction Schottky diodes at a voltage class of 1700 volts, aiming for breakdow... » read more

Controlling The Reliability Of Silicon Carbide-Based Devices


The development of wide bandgap silicon carbide (SiC) compound semiconductors has proved to be extremely beneficial for power conversion applications. Capable of switching at significantly higher frequencies, and with higher breakdown voltage characteristics, SiC power transistors are quickly becoming an attractive silicon alternative for high power density and/or high-efficiency power conver... » read more

Understand MOSFET Switch Behavior Via An LED Driver Simulation


Automotive incandescent bulbs have largely given way to more efficient, reliable, stylish, and even safer light emitting diodes (LEDs). LEDs turn on in a fraction of the time and are especially useful in brake lamps, where fractions of a second matter. The challenge in designing an automotive LED lamp is in satisfying government requirements for light output while also being cost effective. Ano... » read more

Manufacturing Bits: Jan. 21


New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation


Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

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