tag: MOSFET

Manufacturing Bits: Jan. 21
By Mark LaPedus - 21 Jan, 2020 - Comments: 0

New high-frequency transistors The Fraunhofer Institute for Applied Solid State Physics IAF has developed a novel high-frequency transistor type—the metal oxide semiconductor HEMT or MOSHEMT. Still in R&D, Fraunhofer’s MOSHEMT has reached record frequencies of 640GHz. MOSHEMTs are designed for the 100GHz frequency ranges and above. Applications include communications, radar and sens... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation
By Technical Paper Link - 02 Oct, 2019 - Comments: 0

Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

Silicon Carbide’s Superpowers
By Llew Vaughan-Edmunds - 15 Aug, 2019 - Comments: 0

As we enter a new computing era driven by the Internet of Things (IoT), Big Data and Artificial Intelligence (AI), demand is growing for more energy-efficient chips. In this context, we usually think about Moore’s Law and reducing the size of transistors. However, advances in power semiconductors are not governed by node size reduction. Silicon power switches, such as MOSFETs and IGBTs, ar... » read more

Inspection, Metrology Challenges Grow For SiC
By Mark LaPedus - 11 Jun, 2019 - Comments: 2

Inspection and metrology are becoming more critical in the silicon carbide (SiC) industry amid a pressing need to find problematic defects in current and future SiC devices. Finding defects always has been a challenging task for SiC devices. But it’s becoming more imperative to find killer defects and reduce them as SiC device vendors begin to expand their production for the next wave of a... » read more

Interest Grows In Ferroelectric Devices
By Katherine Derbyshire - 27 Dec, 2018 - Comments: 0

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold swing, which is the change in gate voltage needed to increase the drain current by one order of magnitude. Measured in units of millivolts per decade, in conventional MOSFETs it is limited to k... » read more

What’s Next For NAND?
By Mark LaPedus - 19 May, 2016 - Comments: 2

NAND flash memory is a key enabler in today’s systems, but it’s a difficult business. NAND suppliers require deep pockets and strong technology to survive in the competitive landscape. And going forward, vendors face new challenges on several fronts. On one front, for example, the overall NAND market is currently in the doldrums, amid soft product prices and a mild capacity glut. Demand ... » read more

One PHY Does Not Fit All
By Rita Horner - 14 May, 2015 - Comments: 0

Consumers expect their battery-operated mobile devices to be faster, smaller and more reliable while providing greater functionality at a reduced cost. Most of all, consumers demand longer battery life and 24/7 access to data. To meet these demands, consumer system-on-a-chip (SoC) designers must make tradeoffs between features, performance, power and cost. Enterprise SoC designers have their... » read more

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