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Design Comparison of SiC MOSFETs for Linear-Mode Operation

Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications

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Source: US Army Research Lab
Authors: Heather O’Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull
August 2019

“Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as channel length, gate oxide thickness, and implantation process, were varied to study the effects on operation in the saturation region. The MOSFETs were evaluated in a pulse circuit at pulse widths ranging from 250 µs to 40 ms. The MOSFETs with the thicker oxide (625 Å) sustained greater pulsed energy dissipation (over 130 J/cm2) than those with thinner oxide. Results suggest that linear-mode silicon carbide MOSFETs with thick oxide can dissipate five times greater pulsed energy density than their commercial silicon counterparts.”

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