New technical paper titled “Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits” from researchers at Federal University of Santa Catarina, Brazil.
Abstract
“This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced compact MOSFET (ACM) model and was implemented in Verilog-A to simulate different circuits designed with the ACM model in Verilog-compatible simulators. Being able to simulate MOS circuits through the same model used in a hand design benefits designers in understanding how the main MOSFET parameters affect the design. Herein, the classic CMOS inverter, a ring oscillator, a self-biased current source and a common source amplifier were designed and simulated using either the 4PM or the BSIM model. The four-parameter model was simulated in many sorts of circuits with very satisfactory results in the low-voltage cases. As the ultra-low-voltage (ULV) domain is expanding due to applications, such as the internet of things and wearable circuits, so is the use of a simplified ULV MOSFET model.”
Find the open access technical paper here. Published June 2022.
Adornes, C.M.; Alves Neto, D.G.; Schneider, M.C.; Galup-Montoro, C. Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits. J. Low Power Electron. Appl. 2022, 12, 34. https://doi.org/10.3390/jlpea12020034.
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