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Designing and Simulating Low-Voltage CMOS Circuits Using Four-Parameter Model


New technical paper titled "Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits" from researchers at Federal University of Santa Catarina, Brazil. Abstract "This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced com... » read more

Variation In Low-Power FinFET Designs


One of the biggest advantages of moving to the a leading edge process node is ultra-low voltage operation, where devices can achieve better performance using less power. But the latest generation process nodes also introduce a number of new challenges due to increased variation that can affect everything from signal integrity to manufacturing yield. While variation is generally well understo... » read more