Beating the Edge AI Power Wall with Low Voltage Foundation IP


Edge AI is pushing the limits of power efficiency as intelligence moves closer to the data source. Designing for ultra-low voltage operation is now essential to achieve optimal performance-per-watt—but it introduces significant complexity in modeling, variation, and design predictability. In this white paper, discover how a unified, silicon-proven Foundation IP platform approach enables relia... » read more

Designing and Simulating Low-Voltage CMOS Circuits Using Four-Parameter Model


New technical paper titled "Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits" from researchers at Federal University of Santa Catarina, Brazil. Abstract "This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced com... » read more

Variation In Low-Power FinFET Designs


One of the biggest advantages of moving to the a leading edge process node is ultra-low voltage operation, where devices can achieve better performance using less power. But the latest generation process nodes also introduce a number of new challenges due to increased variation that can affect everything from signal integrity to manufacturing yield. While variation is generally well understo... » read more