Designing and Simulating Low-Voltage CMOS Circuits Using Four-Parameter Model

New technical paper titled "Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits" from researchers at Federal University of Santa Catarina, Brazil. Abstract "This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced com... » read more