A new technical paper titled “High-throughput design of functional-engineered MXene transistors with low-resistive contacts” was published by researchers at Indian Institute of Science (IISc) Bangalore.
Abstract (partial):
“Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, downscaling appears to be challenging owing to high metal-semiconductor contact resistance. Here, we propose a functional group-engineered monolayer transistor architecture that takes advantage of MXenes’ natural material chemistry to offer low-resistive contacts. We design an automated, high-throughput computational pipeline that first performs hybrid density functional theory-based calculations to find 16 sets of complementary transistor configurations by screening more than 23,000 materials from an MXene database and then conducts self-consistent quantum transport calculations to simulate their current-voltage characteristics for channel lengths ranging from 10 nm to 3 nm.”
Find the technical paper here. Published September 2022.
Guha, S., Kabiraj, A. & Mahapatra, S. High-throughput design of functional-engineered MXene transistors with low-resistive contacts. npj Comput Mater 8, 202 (2022). https://doi.org/10.1038/s41524-022-00885-6. Permissions are open access.
Related Reading
MXene-GaN Van Der Waals Metal-Semiconductor Junctions For High Performance Multiple Quantum Well Photodetectors
Manufacturing Bits: May 18
Leave a Reply