Promising Materials Beyond Silicon (TI, AIXTRON, imec)


A new technical paper titled "Future materials for beyond Si integrated circuits: a Perspective" was published by researchers at Texas Instruments, AIXTRON SE and imec. Abstract: "The integration of novel materials has been pivotal in advancing Si-based devices ever since Si became the preferred material for transistors, and later, integrated circuits. New materials have rapidly been adopte... » read more

Patterning Doping On Very Large Monolayer MoS2 (NREL)


A new technical paper titled "Spatially Precise Light-Activated Dedoping in Wafer-Scale MoS2 Films" was published by researchers at National Renewable Energy Laboratory (NREL) and Renewable & Sustainable Energy Institute (RASEI). "In this work, we unravel the mechanism that drives PL* changes of MoS2 monolayers under laser illumination in ambient conditions. We demonstrate the critical ... » read more

Review of Advances in 3D integration of 2D Neuromorphic Electronics, Materials to Systems


A new technical paper titled "2D materials-based 3D integration for neuromorphic hardware" was published by researchers at  Seoul National University and University of Southern California. Find the technical paper here. November 2024. Kim, S.J., Lee, HJ., Lee, CH. et al. 2D materials-based 3D integration for neuromorphic hardware. npj 2D Mater Appl 8, 70 (2024). https://doi.org/10.10... » read more

Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

TFETs: Design and Operation, Including Material Selection and Simulation Methods


A new technical paper titled "Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review" was published by researchers at University of Chicago and Argonne National Lab. Abstract "Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transi... » read more

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs


A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

Finely Tuning The Electronic Band Structure of WSe2 With AFM


A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo,  and Stanford University. Abstract: "Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain... » read more

Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method


A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties 


A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.)


A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST). Abstract: "The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into h... » read more

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