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New Method For Determining How 2D Materials Expand (MIT)


A new technical paper titled "A unified approach and descriptor for the thermal expansion of two-dimensional transition metal dichalcogenide monolayers" was published by researchers at MIT and Southern University of Science and Technology (China). "A new technique that accurately measures how atom-thin materials expand when heated could help engineers develop faster, more powerful electronic... » read more

Full Wafer Integration of Aggressively Scaled 2D-Based Logic Circuits (Imec)


A technical paper titled "Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits" was published by researchers at Imec. "The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full waf... » read more

Wafer Scale Tool To Transfer Graphene


A new technical paper titled "Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements" was published by researchers at RWTH Aachen University, AMO GmbH, Infineon Technologies, Protemics GmbH, and Advantest Europe. Abstract (partial): "Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based elect... » read more

Hardware Platform Based on 2D Memtransistors


A new technical paper titled "Hardware implementation of Bayesian network based on two-dimensional memtransistors" from researchers at Penn State University. "In this work, we demonstrate hardware implementation of a BN [Bayesian networks] using a monolithic memtransistor technology based on two-dimensional (2D) semiconductors such as monolayer MoS2. First, we experimentally demonstrate a lo... » read more

Thermal Scanning Probe Lithography


A new technical paper titled "Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography" was published by researchers at École Polytechnique Fédérale de Lausanne (EPFL). "Thermal scanning probe lithography (t-SPL) is a gentle alternative to the typically used electron beam lithography to fabricate these devices avoiding the use of electrons, which are well known to... » read more

Functional-Engineered MXene Transistors


A new technical paper titled "High-throughput design of functional-engineered MXene transistors with low-resistive contacts" was published by researchers at Indian Institute of Science (IISc) Bangalore. Abstract (partial): "Two-dimensional material-based transistors are being extensively investigated for CMOS (complementary metal oxide semiconductor) technology extension; nevertheless, down... » read more

Implementations of 2D Material-Based Devices For IoT Security


A new research paper titled "Application of 2D Materials in Hardware Security for Internet-of-Things: Progress and Perspective" was published by researchers at National University of Singapore and A*STAR. The paper explores the "implementation of hardware security using 2D materials, for example, true random number generators (TRNGs), physical unclonable functions (PUFs), camouflage, and ant... » read more

State Of The Art And Recent Progress of Reconfigurable Electronic Devices Based on 2D Materials


A new technical paper titled "Emerging reconfigurable electronic devices based on two-dimensional materials: A review" was just published by researchers at TU Dresden, NaMLAb gGmbH, and RWTH Aachen University. Abstract "As the dimensions of the transistor, the key element of silicon technology, are approaching their physical limits, developing semiconductor technology with novel concepts an... » read more

Big Changes In Architectures, Transistors, Materials


Chipmakers are gearing up for fundamental changes in architectures, materials, and basic structures like transistors and interconnects. The net result will be more process steps, increased complexity for each of those steps, and rising costs across the board. At the leading-edge, finFETs will run out of steam somewhere after the 3nm (30 angstrom) node. The three foundries still working at th... » read more

Split-Gate FETs (SG-FETs)


This technical paper titled "Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications" was published by researchers at Department of Electrical and Computer Engineering, Inha University (South Korea) and Korea Institute of Science and Technology (KIST), Seoul. Abstract "Two-dimensional (2D) materials have been extensively adopted in variou... » read more

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