Strain Engineering in 2D FETs (UCSB)


A new technical paper titled "Strain engineering in 2D FETs: Physics, status, and prospects" was published by researchers at UC Santa Barbara. "In this work, we explore the physics and evaluate the merits of strain engineering in two-dimensional van der Waals semiconductor-based FETs (field-effect-transistors) using DFT (density functional theory) to determine the modulation of the channel m... » read more

TFETs: Design and Operation, Including Material Selection and Simulation Methods


A new technical paper titled "Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review" was published by researchers at University of Chicago and Argonne National Lab. Abstract "Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transi... » read more

Potential Of 2D Semi-Metallic PtSe2 As Source/Drain Contacts For 2D Material FETs


A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe2 Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University. Abstract: "In this ... » read more

Finely Tuning The Electronic Band Structure of WSe2 With AFM


A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo,  and Stanford University. Abstract: "Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain... » read more

Properties of Commercially Available Hexagonal Boron Nitride Grown By The CVD Method


A new technical paper titled "On the quality of commercial chemical vapour deposited hexagonal boron nitride" was published by researchers at KAUST and the National Institute for Materials Science in Japan. Abstract "The semiconductors industry has put its eyes on two-dimensional (2D) materials produced by chemical vapour deposition (CVD) because they can be grown at the wafer level with sm... » read more

Tweaking Isotopes In Thin Semiconductor Materials Can Influence Optical And Electronic Properties 


A technical paper titled “Anomalous isotope effect on the optical bandgap in a monolayer transition metal dichalcogenide semiconductor” was published by researchers at Oak Ridge National Laboratory (ORNL) and University of Central Florida. Abstract: "Isotope effects have received increasing attention in materials science and engineering because altering isotopes directly affects phonons, ... » read more

Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.)


A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST). Abstract: "The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into h... » read more

Research Bits: April 23


Probabilistic computer prototype Researchers at Tohoku University and the University of California Santa Barbara created a prototype of a heterogeneous probabilistic computer that combines a CMOS circuit with a limited number of stochastic nanomagnets. It aims to improve the execution of probabilistic algorithms used to solve problems where uncertainty is inherent or where an exact solution... » read more

2D van der Waals Magnets Above Room Temperature (MIT)


A new technical paper titled "Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature" was published by researchers at MIT, with funding by the NSF and U.S. Department of Energy. Abstract "Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory an... » read more

Band-To-Band Tunneling And Negative Differential Resistance in Heterojunctions Built Entirely Using 2D Materials


A technical paper titled "Electrical characterization of multi-gated WSe2 /MoS2 van der Waals heterojunctions" was published by researchers at Helmholtz-Zentrum Dresden Rossendorf (HZDR), TU Dresden, National Institute for Materials Science (Japan) and NaMLab gGmbH. Abstract "Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the pr... » read more

← Older posts Newer posts →