tag: 2D materials

Simulating Atomic Layer Processing Of 2D Materials
By Synopsys - 18 Sep, 2025 - Comments: 0

Integrating 2D materials into sustainable electronic devices presents key challenges, particularly in depositing or etching nanometer-thick layers on high aspect ratio structures. Atomic Layer Etching (ALE) offers atomic-level precision and has demonstrated success in producing atomically thin layers of transition metal dichalcogenides (TMDs) like MoS2. Synopsys has developed an industry-grade ... » read more

Nanofabrication Protocol That Allows Patterning Metallic Electrodes on 2D Materials Reliably (KAUST, National University of Singapore)
By Technical Paper Link - 25 Aug, 2025 - Comments: 0

A new technical paper titled "High-yield photolithography protocol to pattern metallic electrodes on 2D materials without adhesive metallic layers" was published by researchers at KAUST and National University of Singapore. Abstract "When using two-dimensional (2D) materials to build electronic devices, adjacent metallic films need to be deposited to form electrodes. However, weak adhesion ... » read more

Colloidal Coordination Nanosheets, And Their Use as Inks For Coating (Tokyo University of Science)
By Technical Paper Link - 11 Jul, 2025 - Comments: 0

A new technical paper titled "Rationally Engineered Heterometallic Metalladithiolene Coordination Nanosheets with Defined Atomic Arrangements" was published by researchers at Tokyo University of Science. Abstract "Coordination nanosheets are 2D polymers formed by coordination bonds between metal ions and planar organic molecules. They offer high molecular design freedom and unique electroni... » read more

Emerging NVM: Review Of Emerging Memory Materials And Device Architectures
By Technical Paper Link - 08 Jul, 2025 - Comments: 0

A new technical paper titled "Emerging Nonvolatile Memory Technologies in the Future of Microelectronics" was published by researchers at Texas A&M University, University of Massachusetts and USC. Abstract "Memory technologies are central to modern computing systems, performing essential functions that range from primary data storage to advanced tasks, such as in-memory computing for ... » read more

Dielectrics for 2D TMDs, Including Deposition Strategies And Emerging Dielectric Materials (Cambridge)
By Technical Paper Link - 08 Jul, 2025 - Comments: 0

A new technical paper titled "Gate dielectrics for transistors based on two-dimensional transition metal dichalcogenide semiconductors" was published by researchers at University of Cambridge. "This perspective analyses the state of the art on 2D TMD and dielectric interfaces, highlighting key challenges in depositing oxide dielectrics on top of atomically thin TMD semiconductors. We provide... » read more

High-Performance p-type 2D FETs By Nitric Oxide Doping (Penn State)
By Technical Paper Link - 01 Jul, 2025 - Comments: 0

A new technical paper titled "High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping" was published by researchers at Penn State University and Florida International University. Abstract "Two-dimensional (2D) materials are promising candidates for next-generation electronics, but the realization of high-performance p-type 2D field-effect transistors (FETs) has... » read more

Roadmap for AI HW Development, With The Role of Photonic Chips In Supporting Future LLMs (CUHK, NUS, UIUC, Berkeley)
By Technical Paper Link - 01 Jun, 2025 - Comments: 0

A new technical paper titled "What Is Next for LLMs? Next-Generation AI Computing Hardware Using Photonic Chips" was published by researchers at The Chinese University of Hong Kong, National University of Singapore, University of Illinois Urbana-Champaign and UC Berkeley. Abstract "Large language models (LLMs) are rapidly pushing the limits of contemporary computing hardware. For example, t... » read more

Electrical Properties of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts (NYCU)
By Technical Paper Link - 31 May, 2025 - Comments: 0

A new technical paper titled "Electrical Characteristics of ML and BL MoS2 GAA NS FETs With Source/Drain Metal Contacts" was published by researchers at National Yang Ming Chiao Tung University. Abstract "This paper reports source/drain (S/D) contact issues in monolayer and bilayer (BL) MoS2 devices through density-functional-theory (DFT) calculation and device simulation. We begin by ana... » read more

2D Materials Roadmap: Current And Future Challenges, Solutions
By Technical Paper Link - 08 Apr, 2025 - Comments: 0

A new technical paper titled "The 2D Materials Roadmap" was published by researchers at many institutions including Chinese Academy of Sciences, TU Denmark, Pennsylvania State University, University of Manchester, University of Cambridge et al. Abstract "Over the past two decades, 2D materials have rapidly evolved into a diverse and expanding family of material platforms. Many members of th... » read more

Research Bits: Mar. 10
By Jesse Allen - 10 Mar, 2025 - Comments: 0

Incipient ferroelectricity Researchers from Penn State University and the University of Minnesota propose harnessing incipient ferroelectricity in multifunctional two-dimensional FETs to create neuromorphic computer memory. Materials with incipient ferroelectricity have no stable ferroelectric order at room temperature and need certain conditions to achieve an electrical charge. The FETs were ... » read more

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