Friction Between Single Layer Graphene And An Atomic Force Microscope Tip


A technical paper titled “Dynamically tuning friction at the graphene interface using the field effect” was published by researchers at University of Illinois Urbana-Champaign and University of California Irvine. Abstract: "Dynamically controlling friction in micro- and nanoscale devices is possible using applied electrical bias between contacting surfaces, but this can also induce unwant... » read more

Directed Self-Assembly Finds Its Footing


Ten years ago, when the industry was struggling to deliver EUV lithography, directed self-assembly (DSA) roared to the forefront of research and development for virtually every manufacturer determined to extend the limits of 193i. It was the hot topic at of the 2012 SPIE Advanced Lithography Conference, with one attendee from Applied Materials comparing its potential to disrupt the industry to ... » read more

How To Fine-Tune Large-Area Molybdenum Disulfide Atomic Layer Deposition At 150°C


A technical paper titled "Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °C" was published by researchers at Eindhoven University of Technology, University of Michigan, and University College Cork. Abstract: "Two-dimensional MoS2 is a promising material for applications, including electronics and electrocatalysis. However, scalable meth... » read more

Overview Of The State Of Semiconducting TMDC Research


A technical paper titled "Potential of Transition Metal Dichalcogenide Transistors for Flexible Electronics Applications" was published by researchers at Advanced Microelectronic Center Aachen (AMICA), RWTH Aachen University, and Bergische Universität Wuppertal. Abstract: "Semiconducting transition metal dichalcogenides (TMDC) are 2D materials, combining good charge carrier mobility, ultimat... » read more

Engineering Miniaturized And Low Operating Voltage Neuromorphic Platforms Across The Light Spectrum 


A technical paper titled “Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In-Sensor Neuromorphic Computation” was published by researchers at RMIT University and Deakin University (Australia). Abstract: "Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synap... » read more

Demonstrating A Fully-2D-Material Based Device For Temperature Sensing In Cryogenic Regimes


A technical paper titled “I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures” was published by researchers at Technische Universität Dresden, Institute of Ion Beam Physics and Materials Research, and National Institute for Materials Science. Abstract: "In this work, we demonstrate the usability of a fully-2D-mat... » read more

Latest Discoveries in the Mechanics of 2D Materials


A new technical paper titled "Recent advances in the mechanics of 2D materials" was published by researchers at McGill University, University of Science and Technology of China, and University of Illinois. "We review significant advances in the understanding of the elastic properties, in-plane failures, fatigue performance, interfacial shear/friction, and adhesion behavior of 2D materials. I... » read more

Hexagonal Boron Nitride Memristors With Nickel Electrodes: Current Conduction Mechanisms & Resistive Switching Behavior (RWTH Aachen)


A new technical paper titled "Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes" was published by researchers at RWTH Aachen University and Peter Gruenberg Institute. Abstract: "The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to i... » read more

New Low-Temp Growth & Fabrication Technology Allowing Integration of 2D Materials Directly Onto A Silicon Circuit (MIT)


A new technical paper titled "Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform" was published by researchers at MIT, Oak Ridge National Laboratory, and Ericsson Research. According to this MIT news article: "Growing 2D materials directly onto a silicon CMOS wafer has posed a major challenge because the process u... » read more

Using The Schottky Barrier Transistor in Various Applications & Material Systems


A new technical review paper titled "The Schottky barrier transistor in emerging electronic devices" was published by researchers at THM University of Applied Sciences, Chalmers University of Technology, CNRS, University Grenoble Alpes and others. Abstract "This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of... » read more

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