Leveraging Multi-Agent RL for Microprocessor Design Space (Harvard, Google)


A new technical paper titled "Multi-Agent Reinforcement Learning for Microprocessor Design Space Exploration" was published by researchers at Harvard University and Google research groups. Abstract "Microprocessor architects are increasingly resorting to domain-specific customization in the quest for high-performance and energy-efficiency. As the systems grow in complexity, fine-tuning arch... » read more

2D-Materials-Based Electronic Circuits (KAUST and TSMC)


A special edition article titled "Electronic Circuits made of 2D Materials" was just published by Dr. Mario Lanza, KAUST Associate Professor of Material Science and Engineering, and Iuliana Radu, corporate researcher at TSMC. This special issue covers 21 articles from leading subject matter experts, ranging from materials synthesis and their integration in micro/nano-electronic devices and c... » read more

Rowhammer: Recent Developments & Future Directions (ETH Zurich)


A new technical paper titled "Fundamentally Understanding and Solving RowHammer" was published by researchers at ETH Zurich. Abstract: "We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is the phenomenon i... » read more

Scalable Optical AI Accelerator Based on a Crossbar Architecture


A new technical paper titled "Scalable Coherent Optical Crossbar Architecture using PCM for AI Acceleration" was published by researchers at University of Washington. Abstract: "Optical computing has been recently proposed as a new compute paradigm to meet the demands of future AI/ML workloads in datacenters and supercomputers. However, proposed implementations so far suffer from lack of sc... » read more

Memory-Based Cyberattacks Become More Complex, Difficult To Detect


Memories are becoming entry points for cyber attacks, raising concerns about system-level security because memories are nearly ubiquitous in electronics and breaches are difficult to detect. There is no end in sight with hackers taking aim at almost every consumer, industrial, and commercial segment, and a growing number of those devices connected to the internet and to each other. According... » read more

Wafer Cleaning Becomes Key Challenge In Manufacturing 3D Structures


Wafer cleaning, once a rather mundane task as simple as dipping wafers in cleaning fluid, is emerging as one of the top major engineering challenges for manufacturing GAA FETs and 3D-ICs. With these new 3D structures — some on the horizon but some already in high-volume manufacturing — semiconductor wafer equipment and materials suppliers in the wet cleaning business are at the epicenter... » read more

Insights Into Advanced DRAM Capacitor Patterning: Process Window Evaluation Using Virtual Fabrication


With continuous device scaling, process windows have become narrower and narrower due to smaller feature sizes and greater process step variability [1]. A key task during the R&D stage of semiconductor development is to choose a good integration scheme with a relatively large process window. When wafer test data is limited, evaluating the process window for different integration schemes can... » read more

Metal Oxide Resist (MOR) EUV Lithography Processes For DRAM Application


This paper reports the readiness of key EUV resist process technologies using Metal Oxide Resist (MOR) aiming for the DRAM application. For MOR, metal contamination reduction and CD uniformity (CDU) are the key performance requirements expected concerning post exposure bake (PEB). Based on years of experience with spin-on type Inpria MOR, we have designed a new PEB oven to achieve contamination... » read more

Pathfinding By Process Window Modeling


In advanced DRAM, capacitors with closely packed patterning are designed to increase cell density. Thus, advanced patterning schemes, such as multiple litho-etch, SADP and SAQP processes may be needed. In this paper, we systematically evaluate a DRAM capacitor hole formation process that includes SADP and SAQP patterning, using virtual fabrication and statistical analysis in SEMulator3D®. The ... » read more

Memory-Computation Decoupling Execution To Achieve Ideal All-Bank PIM Performance


A new technical paper titled "Achieving the Performance of All-Bank In-DRAM PIM With Standard Memory Interface: Memory-Computation Decoupling" was published by researchers at Korea University. "This paper proposed the memory-computation decoupled PIM architecture to provide the performance comparable to the all-bank PIM while preserving the standard DRAM interface, i.e., DRAM commands, powe... » read more

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