What’s Next For Through-Silicon Vias

By Laura Peters - 06 Jan, 2025 - Comments: 0

From large TSVs for MEMS to nanoTSVs for backside power delivery, cost-effective process flows for these interconnects are essential for making 2.5D and 3D packages more feasible. Through-silicon vias (TSVs) enable shorter interconnect lengths, which reduces chip power consumption and latency to carry signals faster from one device to another or within a device. Advanced packaging technology... » read more

A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-via and Solder Bumping Process

By Technical Paper Link - 23 Dec, 2021 - Comments: 0

Abstract "With the continuous miniaturization of electronic devices and the upcoming new technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation cellular networks (5G), etc., the electronics industry is achieving high-speed, high-performance, and high-density electronic packaging. Three-dimensional (3D) Si-chip stacking using through-Si-via (TSV) and sol... » read more

Effective Post-TSV-DRIE Wet Clean Process For Through Silicon Via Applications

By Veeco - 18 Mar, 2020 - Comments: 0

Deep Reactive Ion Etch (DRIE) processes used to form through silicon vias (TSVs) achieve high aspect ratios by depositing polymer on the vertical sidewalls of the features. This polymer material must be removed before other materials (including dielectric liner, Cu barrier, and Cu) are deposited in the TSVs. Clean processes adapted from Cu damascene integration flows use a combination of oxygen... » read more

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What’s Next For Through-Silicon Vias

A Review on the Fabrication and Reliability of Three-Dimensional Integration Technologies for Microelectronic Packaging: Through-Si-via and Solder Bumping Process

Effective Post-TSV-DRIE Wet Clean Process For Through Silicon Via Applications

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