Indium Nitrate As An Advanced Metal-Oxide Resist for EUV Lithography


A new technical paper titled "Sensitivity and contrast of indium nitrate hydrate resist evaluated by low-energy electron beam and extreme ultraviolet exposure" was published by researchers at UT Dallas. "We evaluate the sensitivity and contrast of indium nitrate resists by analyzing dose curves collected using electron beam lithography (EBL) and extreme ultraviolet (EUV) exposure, " states t... » read more

Hybrid Photoresist Capable Of High-Resolution, Positive-Tone EUVL Patterning


A technical paper titled “Vapor-Phase Infiltrated Organic–Inorganic Positive-Tone Hybrid Photoresist for Extreme UV Lithography” was published by researchers at Stony Brook University, Brookhaven National Laboratory, and University of Texas at Dallas. Abstract: "Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microe... » read more