Power/Performance Bits: Feb. 26


Integrated RRAM for edge AI Researchers at CEA-Leti and Stanford University have developed the first circuit integrating multiple-bit non-volatile Resistive RAM (RRAM) with silicon computing units, as well as new memory resiliency features that provide 2.3-times the capacity of existing RRAM. The proof-of-concept chip monolithically integrates two heterogeneous technologies: 18KB of on-chip... » read more