A new technical paper titled "Design Decoupling of Inner-and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling" was published by researchers at Belgium Research Center, Huawei Technologies and Global TCAD Solutions.
Abstract:
"Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner -and outer-gates in gate-all-around ...
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