A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras).
Abstract:
"Hafnium oxide (HfO2)-based ferroelectric fiel...
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