Logic-in-memory with MoS2
Engineers at École Polytechnique Fédérale de Lausanne (EPFL) built a logic-in-memory device using molybdenum disulfide (MoS2) as the channel material. MoS2 is a three-atom-thick 2D material and excellent semiconductor.
The new chip is based on floating-gate field-effect transistors (FGFETs) that can hold electric charges for long periods. MoS2 is particularly se...
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