A technical paper titled “Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2” was published by researchers at University of Toronto, University of Tokyo, and Stanford University.
Abstract:
"Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain...
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