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Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node


New research paper from University of Saskatchewan, with funding by NSERC and the Cisco University Research Program. Abstract "Fully Depleted Silicon on Insulator (FD SOI) technology nodes provide better resistance to single event upsets than comparable bulk technologies, but upsets are still likely to occur at nano-scale feature sizes, and additional hardening techniques should be explor... » read more

The Advantages Of FD-SOI Technology


If my memory serves me well, it was at the 1989 Device Research Conference where the potential merits of SOI (Silicon on Insulator) technology were discussed in a heated evening panel discussion. At that panel discussion, there were many advocates for SOI, as well as many naysayers. I didn’t really think more about SOI technology until the mid-nineties, when I was sitting in a meeting where t... » read more

28, 20nm Nodes Demand Advanced Power Management


By Ann Steffora Mutschler With the complexity of getting 28 and 20nm designs to reach desired yields with the desired power and performance on the shoulders of design teams, advanced power management techniques are a must. Sub-clock power gating, clock power gate structures, adaptive body bias and other techniques are making it possible. Sub-Clock Power Gating Far from a new techniqu... » read more