Potential of AOS Memories As A High-Performance SRAM Substitute (Georgia Tech, U. of Virginia)


A new technical paper titled "Optimization and Benchmarking of Monolithically Stackable Gain Cell Memory for Last-Level Cache" was published by researchers at Georgia Institute of Technology and University of Virginia. Abstract: "The Last Level Cache (LLC) is the processor's critical bridge between on-chip and off-chip memory levels - optimized for high density, high bandwidth, and low oper... » read more