tag: gate all around

Models for Both Strained and Unstrained GAA FETs Using Neural Networks
By Technical Paper Link - 23 Sep, 2024 - Comments: 0

A new technical paper titled "Impact of Strain on Sub-3 nm Gate-all-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach" was published by researchers at Hanyang University and Alsemy Inc. Abstract "Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D... » read more

How To Get The Most Out Of Gate-All-Around Designs
By Andrew Appleby - 25 Apr, 2024 - Comments: 0

The semiconductor industry has relied on finFETs, three-dimensional field-effect transistors with thin vertical fins, for many generations of technology. However, the industry is reaching the limits of how much finFETs can be shrunk while maintaining their speed and power benefits, which are crucial for artificial intelligence (AI) and machine learning (ML) applications. The solution is the gat... » read more

Reimagining PVT Monitoring IP For Advanced Node GAA Process
By Rohan Bhatnagar - 09 Apr, 2024 - Comments: 0

As process technology continues to evolve, so must design tools and the IP that support them. One example of an industry evolution is on the PVT monitoring IP side. The process, voltage, and temperature (PVT) monitors embedded within chips provide feedback on silicon status at every stage of the lifecycle, including mission use in the field. The data gathered from the monitors enables benefits ... » read more

Innovations in Device Design of The Gate-All-Around (GAA) Nanosheet FETs (IBM Research)
By Technical Paper Link - 23 Mar, 2023 - Comments: 0

A technical paper titled "A Review of the Gate-All-Around Nanosheet FET Process Opportunities" was published by researchers at IBM Research Albany. Abstract: "In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel... » read more

Define & Grow III–V Vertical Nanowires At A High Footprint Density on a Si Platform
By Technical Paper Link - 29 Jul, 2022 - Comments: 0

New technical paper titled "Directed Self-Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All-Around Deposition" is published from researchers at Lund University in Sweden. Abstract: "Fabrication of next generation transistors calls for new technological requirements, such as reduced size and increased density of structures. Development of cost-effective proc... » read more

FEOL Nanosheet Process Flow & Challenges Requiring Metrology Solutions (IBM Watson)
By Technical Paper Link - 08 Jul, 2022 - Comments: 0

New technical paper titled "Review of nanosheet metrology opportunities for technology readiness," from researchers at IBM Thomas J. Watson Research Ctr. (United States). Abstract (partial): "More than previous technologies, then, nanosheet technology may be when some offline techniques transition from the lab to the fab, as certain critical measurements need to be monitored in real time. T... » read more

Synchrotron S-ray Diffraction-based Non-destructive Nanoscale Mapping of Si/SiGe Nanosheets for GAA structures
By Technical Paper Link - 13 Jun, 2022 - Comments: 0

New research paper titled "Mapping of the mechanical response in Si/SiGe nanosheet device geometries" from researchers at IBM T.J. Watson Research Center and Brookhaven National Laboratory. Sponsored by U.S. DOE. Abstract "The performance of next-generation, nanoelectronic devices relies on a precise understanding of strain within the constituent materials. However, the increased flexibilit... » read more

Semiconductor Test In The Gate All Around Era
By Rick Burns - 10 May, 2022 - Comments: 0

The past two years have witnessed unprecedented growth in the semiconductor industry, driven by advances in artificial intelligence, natural language processing, automated vehicles, and augmented and virtual reality. All of these applications depend heavily on advancements in semiconductors to meet their needs for enormous computational processing and communication bandwidth to makes sense of t... » read more

Precision Selective Etch Tools Pave The Way For The Next Technology Inflection
By Tim Archer - 17 Feb, 2022 - Comments: 0

Over the past decade, the need for increasingly smaller, denser, more powerful chips has been driving semiconductor manufacturers to move away from planar structures in favor of increasingly complex three-dimensional (3D) structures. Why? Simply put, stacking elements vertically enables greater density. Use of 3D architectures to support advanced logic and memory applications represents the ... » read more

From FinFETs To Gate-All-Around
By Nerissa Draeger - 19 Nov, 2020 - Comments: 0

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior planar transistors, the fin, contacted on three sides by the gate, provides much better control of the channel formed within the fin. But, finFETs are already reaching the end of their utility as... » read more

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