Improving Power and Speed in GAA-NS FETs


A new technical paper titled "Design Decoupling of Inner-and Outer-Gate Lengths in Nanosheet FETs for Ultimate Scaling" was published by researchers at Belgium Research Center, Huawei Technologies and Global TCAD Solutions. Abstract: "Using a full design-technology-co-optimization (DTCO) methodology, we show the advantages of design decoupling of inner -and outer-gates in gate-all-around ... » read more