Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)


A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge, Linköping University, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo. Abstract: "A design concept of phase-separated amorphous nano... » read more