Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization

By Brewer Science - 20 May, 2021 - Comments: 0

In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional g... » read more

Si Hardmask (Si-HM), EUV And Zero Defects

By Hao Lee - 26 Oct, 2020 - Comments: 0

The multilayer system used in lithography consists of a planarizing carbon layer beneath a hardmask etch-transferring layer and capped with a standard photoresist coating. In the past, Brewer Science has discussed in-depth how the multilayer system helped to extend ArF (193 nm) immersion lithography to be able to print and transfer ever-shrinking features, ensuring enough process window especia... » read more

Extending The Hardmask

By Mark LaPedus - 19 May, 2015 - Comments: 0

In chip production, the backend-of-the-line (BEOL) is where the critical interconnects are formed within a device. Interconnects—those tiny wiring schemes in devices—are becoming more compact at each node. This, in turn, is causing a degradation in performance and an increase in the resistance-capacitance (RC) delay in chips. “The scaling roadblocks that the interconnect faces need to ... » read more

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tag: hardmask

Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization

Si Hardmask (Si-HM), EUV And Zero Defects

Extending The Hardmask