Si Hardmask (Si-HM), EUV And Zero Defects


The multilayer system used in lithography consists of a planarizing carbon layer beneath a hardmask etch-transferring layer and capped with a standard photoresist coating. In the past, Brewer Science has discussed in-depth how the multilayer system helped to extend ArF (193 nm) immersion lithography to be able to print and transfer ever-shrinking features, ensuring enough process window especia... » read more

Extending The Hardmask


In chip production, the backend-of-the-line (BEOL) is where the critical interconnects are formed within a device. Interconnects—those tiny wiring schemes in devices—are becoming more compact at each node. This, in turn, is causing a degradation in performance and an increase in the resistance-capacitance (RC) delay in chips. “The scaling roadblocks that the interconnect faces need to ... » read more