MOVPE Grown (100) Beta-Gallium Oxide Layers for Power Electronics Application

A technical paper titled "Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application" was published by researchers at Leibniz-Institut für Kristallzüchtung (IKZ), Germany. "Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency ele... » read more