Optimizing The Growth And Transfer Process of Graphene (Cambridge, RWTH Aachen)

A technical paper titled "Putting High-Index Cu on the Map for High-Yield, Dry-Transferred CVD Graphene" was published by researchers at University of Cambridge, RWTH Aachen University, and National Institute for Materials Science. Abstract: "Reliable, clean transfer and interfacing of 2D material layers are technologically as important as their growth. Bringing both together remains a ch... » read more

High Electron Mobility in Strained GaAs Nanowires

Abstract: "Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where elec... » read more

Power/Performance Bits: Dec. 23

High mobility transistor Engineers at the University of Delaware created a high-electron mobility transistor, a device that amplifies and controls electrical current, using gallium nitride (GaN) with indium aluminum-nitride as the barrier on a silicon substrate. Among devices of its type, the team says their transistor has record-setting properties, including record low gate leakage current... » read more