Metrology Challenges For Gate-All-Around

By Mark LaPedus - 16 Apr, 2020 - Comments: 3

Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in devices. Measuring and characterizing structures in devices has become more difficult and expensive at each new node, and the introduction of new types of transistors is making this even harder. Ev... » read more

Can We Measure Next-Gen FinFETs?

By Mark LaPedus - 21 Nov, 2016 - Comments: 6

After ramping up their respective 16nm/14nm finFET processes, chipmakers are moving towards 10nm and/or 7nm, with 5nm in R&D. But as they move down the process roadmap, they will face a new set of fab challenges. In addition to lithography and interconnects, there is metrology. Metrology, the science of measurements, is used to characterize tiny films and structures. It helps to boost yi... » read more

Searching For 3D Metrology

By Mark LaPedus - 19 Mar, 2015 - Comments: 3

In the previous decade, chipmakers made a bold but necessary decision to select the [getkc id="185" kc_name="finFET"] as the next transistor architecture for the IC industry. Over time, though, chipmakers discovered that the finFET would present some challenges in the fab. Deposition, etch and lithography were the obvious hurdles, but chipmakers also saw a big gap in metrology. In fact,... » read more

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tag: high-resolution X-ray diffraction

Metrology Challenges For Gate-All-Around

Can We Measure Next-Gen FinFETs?

Searching For 3D Metrology