Improving The Gate Oxide Reliability in Gate First HKMG DRAM Structures (Sungkyunkwan Univ., Samsung)


A new technical paper titled "Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM" was published by researchers at Sungkyunkwan University and Samsung Electronics. Abstract: "The challenges associated with semiconductor are increasing because of the rapid changes in the semiconductor market and the extreme scaling of semiconductors, with some processes reaching their te... » read more