Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching


Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure dose can reduce LER/LWR, but it also decreases wafer throughput, which is highly undesirable given the EUV tool’s high operating costs. Ion beam etching (IBE) can directionally etch away roug... » read more

Etch Techniques for Next-Generation Storage-Class Memory


Chipmakers make abundant use of two very different functional classes of memory in their products. For operational use (main/primary memory) where speed is critical, DRAM and SRAM are employed, whereas for long-term storage, flash memory – in particular NAND – provides the high capacity at low cost needed. For both classes, efforts to improve speed, capacity, and power usage are ongoing. To... » read more