Manufacturing Bits: Sept. 17


Full-chip inverse lithography D2S has developed new hardware and software that enables a long-awaited technology--full-chip masks using inverse lithography technology (ILT). For years, ILT has been a promising technology. ILT is a next-generation reticle enhancement technique (RET) that enables an optimal photomask pattern for both optical and extreme ultraviolet (EUV) lithography reticles.... » read more

Mixed Picture Seen For EUV Masks


The confidence level of extreme ultraviolet (EUV) lithography continues to grow as the technology moves into production, but the EUV mask infrastructure remains a mixed picture, according to new surveys released by the eBeam Initiative. The EUV mask infrastructure involves several technologies that are in various stages of development. On one front, the outlook for several mask tool technol... » read more

EUV Mask Gaps And Issues


Semiconductor Engineering sat down to discuss extreme ultraviolet (EUV) lithography and photomask technologies with Emily Gallagher, principal member of the technical staff at Imec; Harry Levinson, principal at HJL Lithography; Chris Spence, vice president of advanced technology development at ASML; Banqiu Wu, senior director of process development at Applied Materials; and Aki Fujimura, chief ... » read more

Will Fab Tool Boom Cycle Last?


Fab equipment spending is on pace for a record year in 2017, and it now appears that momentum could continue into 2018. Fab tool vendors found themselves in the midst of an unexpected boom cycle in 2017, thanks to enormous demand for equipment in [getkc id="208" comment="3D NAND"] and, to a lesser degree, [getkc id="93" kc_name="DRAM"]. In the logic/foundry business, however, equipment deman... » read more

Next-Gen Mask Writer Race Begins


Competition is heating up in the mask writer equipment business as two vendors—Intel/IMS and NuFlare—vie for position in the new and emerging multi-beam tool segment. Last year, Intel surprised the industry by acquiring IMS Nanofabrication, a multi-beam e-beam mask writer equipment vendor. Also last year, IMS, now part of Intel, began shipping the world’s first multi-beam mask writer f... » read more

Inside Lithography And Masks


Semiconductor Engineering sat down to discuss lithography and photomask technologies with Gregory McIntyre, director of the Advanced Patterning Department at [getentity id="22217" e_name="Imec"]; Harry Levinson, senior fellow and senior director of technology research at [getentity id="22819" comment="GlobalFoundries"]; David Fried, chief technology officer at [getentity id="22210" e_name="Cove... » read more

Inside Photomask Writing


Hirokazu Yamada, a board member and the director of the Mask Lithography Division of NuFlare, sat down with Semiconductor Engineering to discuss photomask technology, e-beam mask writer trends and other topics. NuFlare is the world’s largest supplier of e-beam mask writers. What follows are excerpts of that conversation. SE: How does the [getkc id="265" kc_name="photomask"] market look in... » read more

What Happened To Inverse Lithography?


Nearly 10 years ago, the industry rolled out a potentially disruptive technique called inverse lithography technology (ILT). But ILT was ahead of its time, causing the industry to push out the technology and relegate it to niche-oriented applications. Today, though, ILT is getting new attention as the semiconductor industry pushes toward 7nm, and perhaps beyond. ILT is not a next-generation ... » read more

Deploying Multi-Beam Mask Writers


Elmar Platzgummer, chief executive of IMS Nanofabrication, sat down with Semiconductor Engineering to discuss the company’s deal with Intel, photomasks, multi-beam mask writer technology and other topics. What follows are excerpts of that conversation. SE: This has been a significant year for IMS for two reasons. First, Intel recently announced plans to acquire IMS. Second, at the recent ... » read more

7nm Fab Challenges


Leading-edge foundry vendors have made the challenging transition from traditional planar processes into the finFET transistor era. The first [getkc id="185" kc_name="finFETs"] were based on the 22nm node, and now the industry is ramping up 16nm/14nm technologies. Going forward, the question is how far the finFET can be scaled. In fact, 10nm finFETs from Samsung are expected to ramp by ye... » read more

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