Flash Getting Stacked High-Bandwidth Version


Key takeaways: A new HBF 3D flash stack is similar to HBM for use in AI processing. HBF capacity will be much higher, allowing static storage of AI model weights, with optimized read speed. Samples are due out later this year, with accelerators featuring it coming out next year. AI inference using modern models requires billions of parameters, and moving them to where they c... » read more

PDN Challenges In DRAM-Based Compute-In-Memory Systems (UT Austin)


A new technical paper, "A comparative study on power delivery aspects of compute-in/near-memory approaches using DRAM," was published by researchers at UT Austin. Abstract "Compute-in-memory (PIM) mitigates the memory wall by performing computation within memory, reducing data movement and improving energy efficiency. DRAM-based PIM is particularly attractive due to its high density, matu... » read more

Optimizing In-Memory AI Accelerators Across Multiple Workloads (KAUST, Compumacy)


Researchers from KAUST and Compumacy for Artificial Intelligence Solutions have released “Joint Hardware-Workload Co-Optimization for In-Memory Computing Accelerators”. Abstract “Software-hardware co-design is essential for optimizing in-memory computing (IMC) hardware accelerators for neural networks. However, most existing optimization frameworks target a single workload, lea... » read more

IMC: Free-Space Optical Neural Network With High Clockrate (Berkeley, USC, TU Berlin)


A new technical paper titled "High-clockrate free-space optical in-memory computing" was published by researchers at UC Berkeley, USC,  and TU Berlin. Abstract "The ability to process and act on data in real time is increasingly critical for applications ranging from autonomous vehicles, three-dimensional environmental sensing, and remote robotics. However, the deployment of deep neural ... » read more

AFMTJ Model For In-Memory Computing (University of Arizona)


University of Arizona researchers published "Antiferromagnetic Tunnel Junctions (AFMTJs) for In-Memory Computing: Modeling and Case Study." Abstract "Antiferromagnetic Tunnel Junctions (AFMTJs) enable picosecond switching and femtojoule writes through ultrafast sublattice dynamics. We present the first end-to-end AFMTJ simulation framework integrating multi-sublattice Landau-Lifshitz-Gilb... » read more

All-In-One Analog AI Accelerator With CMO/HfOx ReRAM Integrated Into The BEOL (IBM Research-Europe)


A new technical paper titled "All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices" was published by researchers at IBM Research-Europe. Abstract "Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or training accelera... » read more

PCM-Based IMC Technology: Overview Of Materials, Device Physics, Design and Fabrication (IBM Research-Europe)


A new technical paper titled "Phase-Change Memory for In-Memory Computing" was published by researchers at IBM Research-Europe. "We review the current state of phase-change materials, PCM device physics, and the design and fabrication of PCM-based IMC chips. We also provide an overview of the application landscape and offer insights into future developments," states the paper. Find the te... » read more

Is In-Memory Compute Still Alive?


In-memory computing (IMC) has had a rough go, with the most visible attempt at commercialization falling short. And while some companies have pivoted to digital and others have outright abandoned the technology, developers are still trying to make analog IMC a success. There is disagreement regarding the benefits of IMC (also called compute-in-memory, or CIM). Some say it’s all about reduc... » read more

A Memory Device With MoS2 Channel For High-Density 3D NAND Flash-Based In-Memory Computing


A technical paper titled “Low-Power Charge Trap Flash Memory with MoS2 Channel for High-Density In-Memory Computing" was published by researchers at Kyungpook National University, Sungkyunkwan University, Dankook University, and Kwangwoon University. Abstract: "With the rise of on-device artificial intelligence (AI) technology, the demand for in-memory computing has surged for data-intensiv... » read more

Ferroelectric Memory-Based IMC for ML Workloads


A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

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