Research Bits: June 9


InGaOx GAA transistor Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx). Doping indium oxide with gallium suppressed oxygen vacancies, improving transistor reliability. "We wanted our crystalline oxide transistor to feature a 'gate-all-around' structure, whereby the gate, which turns the current on or off, surrounds t... » read more

Monolithic 3D TFT Integration at Room Temperature, Used to Stack 10 Vertical Layers


A new technical paper titled "Three-dimensional integrated metal-oxide transistors" was published by researchers at KAUST (King Abdullah University of Science and Technology). Abstract "The monolithic three-dimensional vertical integration of thin-film transistor (TFT) technologies could be used to create high-density, energy-efficient and low-cost integrated circuits. However, the develo... » read more