tag: Institute of Science Tokyo

Research Bits: May 26
By Jesse Allen - 26 May, 2026 - Comments: 0

Simultaneous energy generation and emission Researchers from the Institute of Science Tokyo and University of Osaka designed an organic semiconductor device that can both generate electricity from light and emit bright visible light. The researchers used two multiple-resonance thermally activated delayed fluorescence (MR-TADF) molecules, v-DABNA and QAO, in a simple layered structure. Their... » read more

High-NA EU Lithography: Extending The STCC Formula (Science Tokyo)
By Technical Paper Link - 06 May, 2026 - Comments: 0

A new technical paper, "Source-position-dependent transmission cross coefficient formula including polarization and mask three-dimensional effects in high-numerical-aperture extreme ultraviolet lithography" was published by researchers at Institute of Science Tokyo. This work is based on the paper presented at SPIE Advanced Lithography + Patterning 2026. "The polarization effect is not negli... » read more

Research Bits: Apr. 21
By Jesse Allen - 21 Apr, 2026 - Comments: 0

Compute-in-memory state space models Researchers from the University of Michigan mapped complex state space models directly onto a compute-in-memory architecture in an example of hardware-software co-design for edge AI. "Compute-in-memory systems offer very high energy efficiency and throughput, but they are rigid and not optimal for convolution and transformer networks. In this study, we s... » read more

Research Bits: Jan. 6
By Jesse Allen - 06 Jan, 2026 - Comments: 0

Ultrathin ferroelectric capacitors Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory capacitor stack using scandium-substituted aluminum nitride ((Al,Sc)N) thin films with platinum electrodes. The total thickness is just 30nm: a 20nm ferroelectric layer sandwiched between 5nm platinum top and bottom electrodes. “Previous r... » read more

Chip Industry Week in Review
By The SE Staff - 19 Sep, 2025 - Comments: 0

Amkor, TSMC, and Cadence partnered with Tesoro VC, which will serve as the lead operator of a new Global AI + Semiconductor Startup Hub and a Global Design Center in Phoenix, Arizona, aimed at chip innovation, startup growth, and advanced manufacturing. Nvidia will invest $5 billion in Intel common stock at a purchase price of $23.28 per share and the companies will collaborate on AI infrastru... » read more

Research Bits: August 5
By Jesse Allen - 05 Aug, 2025 - Comments: 0

Non-volatile RF switches Researchers from Ulsan National Institute of Science and Technology (UNIST) designed non-volatile RF switches based on vanadium oxide (VOx) for high-frequency bands used in next-generation wireless communications like 6G. The RF switch uses a memristor structure that enables it to operate and maintain its set state without consuming standby power. Additionally, the ... » read more

Research Bits: July 7
By Jesse Allen - 07 Jul, 2025 - Comments: 0

3D NAND PUF Researchers from Seoul National University developed a new hardware security technology based on commercially available 3D NAND flash memory. The approach is an adaptation of physical unclonable functions (PUFs) with the ability to hide a security key under user data when not in use and reveal it only when needed. The same memory space used for storing security keys can be repurpos... » read more

Research Bits: July 1
By Jesse Allen - 01 Jul, 2025 - Comments: 0

Copper-to-copper bonding for GaN integration Researchers from MIT, Georgia Tech, and Air Force Research Laboratory propose a bonding process to integrate gallium nitride (GaN) transistors onto standard silicon CMOS chips. They used the process to create a power amplifier. “We wanted to combine the functionality of GaN with the power of digital chips made of silicon, but without having to ... » read more

Chip Industry Week in Review
By The SE Staff - 27 Jun, 2025 - Comments: 0

AI featured big at this week's Design Automation Conference (DAC) in San Francisco. Dozens of companies featured AI-related tools (see product section below), as well as significant improvements to existing tools and some entirely new approaches for designing chips. Among the highlights: Siemens unveiled an AI-enhanced toolset for the EDA design flow that enables customers to integrate the... » read more

Research Bits: June 17
By Jesse Allen - 17 Jun, 2025 - Comments: 0

Superlattice castellated FETs Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride (GaN) that could lead to improved radio frequency device performance, crucial for enabling 6G devices. “We have piloted a device technology, working with collaborators, called superlattice castellated field effect transistors (SLCFETs),... » read more

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