tag: ion beam etch

Laser-Focused Results: Improving EUV Line Edge Roughness With Ion Beam Etching
By Timothy Yang - 22 May, 2025 - Comments: 1

Extreme ultraviolet (EUV) lithography exposed resist patterns can exhibit excessive line edge roughness (LER) and line width roughness (LWR) due to random or shot noise. Increasing the EUV exposure dose can reduce LER/LWR, but it also decreases wafer throughput, which is highly undesirable given the EUV tool’s high operating costs. Ion beam etching (IBE) can directionally etch away roug... » read more

A Deposition And Etch Technique To Lower Resistance Of Semiconductor Metal Lines
By Timothy Yang - 20 Apr, 2023 - Comments: 0

Copper's resistivity depends on its crystal structure, void volume, grain boundaries and material interface mismatch, which becomes more significant at smaller scales. The formation of copper (Cu) wires is traditionally done by etching a trench pattern in low-k silicon dioxide using a trench etch process, and subsequently filling the trench with Cu via a damascene flow. Unfortunately, this meth... » read more

Highly Selective Etch Rolls Out For Next-Gen Chips
By Mark LaPedus - 21 Mar, 2022 - Comments: 0

Several etch vendors are starting to ship next-generation selective etch tools, paving the way for new memory and logic devices. Applied Materials was the first vendor to ship a next-gen selective etch system, sometimes called highly-selective etch, in 2016. Now, Lam Research, TEL, and others are shipping tools with highly-selective etch capabilities, in preparation for futuristic devices su... » read more

Four Foundries Back MRAM
By Mark LaPedus - 23 Aug, 2017 - Comments: 4

Four major foundries plan to offer MRAM as an embedded memory solution by this year or next, setting the stage for what finally could prove to be a game-changer for this next-generation memory technology. GlobalFoundries, Samsung, TSMC and UMC plan to start offering spin-transfer torque magnetoresistive RAM (ST-MRAM or STT-MRAM) as an alternative or a replacement to NOR flash, possibly start... » read more

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