Detection Of Contaminants In Positive And Negative Ion Mode Using In-line SIMS With An Oxygen Primary Ion Beam

Utilizing Secondary Ion Mass Spectrometry (SIMS) for in-line metrology is a newly emerging method of process control that requires contamination-free measurements, enabling SIMS on product wafers. SIMS measurements of negative ions are usually associated with a Cesium primary ion beam. Unfortunately, when Cesium is present in Silicon, it forms trap states in the Si band gap, which can cause ser... » read more