Manufacturing Bits: Jan. 17


GOOI FETs The next-generation power semiconductor market is heating up. Two wide-bandgap technologies—gallium nitride (GaN) on silicon devices and silicon carbide (SiC) MOSFETs—are ramping up in the power semi market. In addition, the industry is also exploring various futuristic technologies, such as bulk vertical GaN, diamond FETs and others. Purdue University has demonstrated another... » read more